Passivated AlGaN / GaN High Electron Mobility Transistors
نویسندگان
چکیده
AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power added efficiency when compared to similarly sized SiyNz passivated devices. Al x Si y N z Passivated AlGaN/GaN High Electron Mobility Transistors
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